Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: IGBTtransistorDescription: IGBT Discrete, Fuji Electric IGBT discrete components and modules, Fuji Electric insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.40691+$953.537010+$920.079650+$915.8974100+$911.7152150+$905.0238250+$899.1687500+$893.31361000+$886.6222 -
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Category: IGBTtransistorDescription: IGBT Discrete, Fuji Electric IGBT discrete components and modules, Fuji Electric insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.35561+$1134.687410+$1124.372125+$1119.214450+$1114.0567100+$1108.8991150+$1103.7414250+$1098.5837500+$1093.4260 -
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Category: IGBTtransistorDescription: IGBT Discrete, Fuji Electric IGBT discrete components and modules, Fuji Electric insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.80361+$1037.689610+$1001.279450+$996.7281100+$992.1769150+$984.8948250+$978.5231500+$972.15131000+$964.8692 -
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Category: IGBTtransistorDescription: FUJI ELECTRIC 2MBI200S-120-50 IGBT Array & Module Transistor, Dual Pack, N Channel, 200A, 2.6V, 1.5kW, 1.2kV, Module18171+$1075.398510+$1037.665250+$1032.9485100+$1028.2319150+$1020.6852250+$1014.0819500+$1007.47861000+$999.9319 -
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Category: IGBTtransistorDescription: IGBT Module, 6 packs, Fuji Electric V - series, 6th generation field block U/U4 series, 5th generation field block S - series, 4th generation NPT injection module. The maximum collector current (Ic) value per crystal is rated. IGBT discrete components and modules, Fuji Electric insulated gate bipolar transistors or IGBTs are three terminal power semiconductor devices known for their high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.10751+$1103.208710+$1093.179525+$1088.164950+$1083.1504100+$1078.1358150+$1073.1212250+$1068.1066500+$1063.0920 -
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Category: IGBTtransistorDescription: Trans IGBT Module N-CH 600V 75A 21Pin P61043661+$142.597710+$138.877850+$136.0258100+$135.0338200+$134.2898500+$133.29791000+$132.67792000+$132.0579 -
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Category: IGBTtransistorDescription: FUJI ELECTRIC 6MBI75VA-120-50 Transistor, IGBT array&module, N-channel, 75 A, 1.85 V, 385 W, 1.2 kV, Module45691+$977.128210+$942.843050+$938.5574100+$934.2717150+$927.4147250+$921.4148500+$915.41481000+$908.5578 -
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Category: IGBTtransistorDescription: IGBT Discrete, Fuji Electric IGBT discrete components and modules, Fuji Electric insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.80951+$881.999810+$851.052450+$847.1840100+$843.3156150+$837.1261250+$831.7103500+$826.29451000+$820.1050 -
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Category: IGBTtransistorDescription: IGBT-IPM R series 600V / 75A 7in one-package49441+$197.443510+$192.292850+$188.3439100+$186.9704200+$185.9403500+$184.56681000+$183.70832000+$182.8499 -
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Category: IGBTtransistorDescription: IPM（Intelligent power module (IGBT), V series, Fuji Electric V series intelligent power module (IPM) are all equipped with driver, control, and protection IGBT circuits. They are easy to implement in power control applications for AC servo motors, air conditioning equipment, and elevators. The built-in protection function optimizes and improves the service life of IPM IGBT, thus protecting high system reliability. IPMS comes with overcurrent, short circuit, control power supply voltage drop, and overheating protection, and includes output alarm signals. 6MBP... without brake chopper 7MBP... with brake chopper # # # IGBT discrete parts and modules, Fuji Electric insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.26781+$746.843610+$720.638650+$717.3630100+$714.0873150+$708.8463250+$704.2605500+$699.67461000+$694.4336 -
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Category: IGBTtransistorDescription: IGBT; IGBT+FWD; Molded; TO-220AB Case; 20A Collector; 75W (Max.); 600V; +/-20V47271+$44.038310+$41.5116100+$39.6345250+$39.3457500+$39.05701000+$38.73212500+$38.44335000+$38.2628 -
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Category: IGBTtransistorDescription: FUJI ELECTRIC 7MBR25VA-120-50 Transistor, IGBT array&module, N-channel, 25 A, 1.85 V, 170 W, 1.2 kV, Module27651+$566.249710+$551.477950+$540.1529100+$536.2138200+$533.2595500+$529.32031000+$526.85842000+$524.3964 -
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Category: IGBTtransistorDescription: IGBT Module, 6 packs, Fuji Electric V - series, 6th generation field block U/U4 series, 5th generation field block S - series, 4th generation NPT injection module. The maximum collector current (Ic) value per crystal is rated. IGBT discrete components and modules, Fuji Electric insulated gate bipolar transistors or IGBTs are three terminal power semiconductor devices known for their high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.96311+$636.232910+$613.908950+$611.1184100+$608.3279150+$603.8631250+$599.9564500+$596.04971000+$591.5849 -
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Category: IGBTtransistorDescription: FUJI ELECTRIC FGW50N60HD Single transistor, IGBT, 95 A, 1.5 V, 360 W, 600 V, TO-247, 3 pins77015+$12.600950+$12.0624200+$11.7608500+$11.68551000+$11.61012500+$11.52395000+$11.47017500+$11.4162 -
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Category: IGBTtransistorDescription: FUJI ELECTRIC 2MBI100S-120-50 Transistor, IGBT array&module, 2 pieces, N-channel, 150 A, 2.6 V, 780 W, 1.2 kV, Module99861+$594.901010+$574.027350+$571.4181100+$568.8089150+$564.6341250+$560.9812500+$557.32831000+$553.1536 -
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Category: IGBTtransistorDescription: Igbt-ipm R Series 600V / 150A 7In One-package62081+$262.348410+$255.504550+$250.2575100+$248.4325200+$247.0637500+$245.23871000+$244.09802000+$242.9574 -
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Category: IGBTtransistorDescription: IGBT Discrete, Fuji Electric IGBT discrete components and modules, Fuji Electric insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.96711+$2823.789110+$2798.118325+$2785.282950+$2772.4475100+$2759.6121150+$2746.7767250+$2733.9413500+$2721.1059 -
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Category: IGBTtransistorDescription: IGBT Discrete, Fuji Electric IGBT discrete components and modules, Fuji Electric insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.35561+$353.859610+$344.628550+$337.5513100+$335.0897200+$333.2434500+$330.78181000+$329.24332000+$327.7048 -
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Category: IGBTtransistorDescription: FUJI ELECTRIC FGW75N60HD Single transistor, IGBT, 100 A, 1.5 V, 500 W, 600 V, TO-247, 3 pins90165+$18.467350+$17.6781200+$17.2361500+$17.12561000+$17.01522500+$16.88895000+$16.81007500+$16.7310 -
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Category: IGBTtransistorDescription: FUJI ELECTRIC FGW50N60VD Single transistor, IGBT, 85 A, 1.6 V, 360 W, 600 V, TO-247, 3 pins18791+$88.510910+$84.6626100+$83.9699250+$83.4311500+$82.58451000+$82.19972500+$81.66095000+$81.1991 -
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Category: IGBTtransistorDescription: FUJI ELECTRIC FGW30N120HD Single transistor, IGBT, 53 A, 1.8 V, 260 W, 1.2 kV, TO-247, 3 pins20551+$66.765610+$63.8627100+$63.3402250+$62.9338500+$62.29521000+$62.00492500+$61.59855000+$61.2501 -
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Category: IGBTtransistorDescription: FUJI ELECTRIC 6MBI100S-120-50 IGBT Array & Module Transistor, 6 Pack, N Channel, 150A, 2.6V, 700W, 1.2kV, Module1387 -
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Category: IGBTtransistorDescription: IGBT Module, 6 packs, Fuji Electric V - series, 6th generation field block U/U4 series, 5th generation field block S - series, 4th generation NPT injection module. The maximum collector current (Ic) value per crystal is rated. IGBT discrete components and modules, Fuji Electric insulated gate bipolar transistors or IGBTs are three terminal power semiconductor devices known for their high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.46961+$985.858310+$951.266850+$946.9429100+$942.6189150+$935.7006250+$929.6471500+$923.59361000+$916.6753 -
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Category: IGBTtransistorDescription: IGBT Discrete, Fuji Electric IGBT discrete components and modules, Fuji Electric insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.71491+$607.485510+$586.170250+$583.5058100+$580.8414150+$576.5783250+$572.8482500+$569.11801000+$564.8549 -
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Category: IGBTtransistorDescription: IGBT Discrete, Fuji Electric IGBT discrete components and modules, Fuji Electric insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.99691+$572.913810+$552.811650+$550.2988100+$547.7860150+$543.7656250+$540.2477500+$536.72981000+$532.7094 -
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Category: IGBTtransistorDescription: FUJI ELECTRIC VLA517-01R Transistors, IGBT arrays& Module, N-channel, 4A, SIP4271
